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Showing results 1 to 7 of 7

Issue DateTitleAuthor(s)
-A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate고의관; Park Young Ju; KIM EUN KYU; PARK CHAN-SOO; 이석현; 이정희; 조성호
2001-08Effects of GaN buffer layer thickness on characteristics of GaN epilayer조용석; 고의관; 박용주; 김은규; 황성민; 임시종; 변동진
-Evaluations of the thin GaN layer grown on (001) GaAs substratePark Young Ju; 고의관; 박일우; C.S. Park; KIM EUN KYU
-Microscopic analysis of direct synthesized GaN microcrystals박일우; 고의관; PARK CHAN-SOO; Park Young Ju; KIM EUN KYU; 박성수; H.W. Shin; 조성호; 김상식; 성만영
-Structural investigation of GaN powder thermally annealed at various temperaturesHong Jin Ki; PARK CHAN-SOO; 고의관; 박일우; Park Young Ju; KIM EUN KYU; 김상식; 성만영
-Study of crystallographical defects of the GaN micro-crystals by Raman spectroscopy and X-ray diffraction고의관; C.S. Park; 박일우; Park Young Ju; KIM EUN KYU; 조성호
-The effect of stress-imposed Si(111) substrate on GaN film고의관; Park Young Ju; KIM EUN KYU; PARK CHAN-SOO; 이석현; 이정희; 조성호
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