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Showing results 1 to 16 of 16

Issue DateTitleAuthor(s)
-Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-meltPark Young Ju; 손맹호; KIM EUN KYU; Min Suk-Ki
1996-01Characteristics of the plasma-induced GaAs nitride layer and its application for the selective area growth.김성일; 민석기; 김은규; 박영주; 최원철; 이상훈; 손맹호
1999-09Electrical characteristics of the native oxide formed by using anodic oxidation with thermal treatment이주식; 박용주; 손맹호; 김은규; 염태호
1995-11Electrical property of TiO2 dielectric thin films grown on n-type InP(100) substrates by low-pressure MOCVD김은규; 손맹호; 한영기; 왕채현; 염상섭; 임종수; 민석기
1996-07Growth of TiO2 dielectric thin films on Si(100) substrates by metalorganic chemical vapor deposition and the electrical properties of the Al/TiO2/p-Si structures염상섭; 김은규; 민석기; 한영기; 임종수; 손맹호
-Observation of a universal behavior in the growth of InAs self-assembled quantum dots on patterned substrates황성우; 손맹호; 최범호; 안도열; 현찬경; 송상헌; Park Young Ju; KIM EUN KYU
-Patterned formation of InAs QDs for single electron device applications손맹호; 최범호; 황성우; 안도열; 현찬경; KIM EUN KYU; KIM YOUN
1996-04Post-growth annealing effects of low-temperature grown TiO//2 thin films on InP substrate by low-pressure metalorganic chemical vapor deposition.김은규; 민석기; 염상섭; 손맹호; 한영기; 왕채현
1996-04Postgrowth annealing effects of TiO//2 thin filmas grown on InP substrate at low-temperature by metal-organic chemical-va[pr deposition.김은규; 손맹호; 민석기; 한영기; 왕채현; 염상섭
-Selective control of InAs self-assembled quantum dots on GaAs with sub-micron metal patterns손맹호; 최범호; 현찬경; KIM EUN KYU; KIM YOUN; 임종수; AHN JIN HO
-Selective formation of semiconductor quantum dots for device applicationsKIM EUN KYU; Park Young Ju; 손맹호; KIM YOUN
-Selective growth of InAs quantum dots on pattened Si-SiO₂ substrates최범호; Chang-Min Park; 송상헌; 황성우; MIN BYUNG DON; 손맹호; 안도열; Park Young Ju; KIM EUN KYU; Min Suk-Ki
-Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate.손맹호; 정석구; MIN BYUNG DON; 현찬경; 최범호; KIM EUN KYU; KIM YOUN; 임종수
1995-01Surface properties and electrical behavior of GaAs treated with (NH//4)//2S//x solution.김성일; 민석기; 이주희; 김은규; 손맹호; 최원철; 최무용
1995-07Thermal stability of a RuO//2 schottky contact on (NH//4)//2S//χ treated n-type GaAs.박용주; 김은규; 손맹호; 임종수; 민석기
-축방향자기장 인가된 수직온도구배냉각법에서 반응용기에 따른 GaAs 단결정의 특성 .Park Young Ju; KIM EUN KYU; 손맹호; CHOI WON CHEOL; Min Suk-Ki

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