Electrical property of TiO2 dielectric thin films grown on n-type InP(100) substrates by low-pressure MOCVD

Other Titles
저압 MOCVD법으로 n형 InP 위에 성장시킨 TiO2 유전체박막의 전기적 특성
Authors
김은규손맹호한영기왕채현염상섭임종수민석기
Issue Date
1995-11
Citation
응용물리, v.8, no.6, pp.630 - 634
Keywords
low pressure MOCVD; thin films; TiO2; InP; MOCVD
ISSN
1013-7009
URI
https://pubs.kist.re.kr/handle/201004/144931
Appears in Collections:
KIST Article > Others
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