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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2024-01A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nmEun sung Park; Ha, Won-Yong; Sung, Park Hyo; Eom Do Yoon; Choi, Hyun Seung; Ahn, Daehwan; Choi, Woo-Young; Lee, Myung-Jae
2022-06-13Back-Illuminated SPADs in Stacked 40nm CIS Technology (Invited Paper)Eun, sung Park; Won-Yong Ha; Ahn, Daehwan; Hyuk An; Suhyun Yi; Kyung-Do Kim; Jongchae Kim; Woo-Young Choi; Lee, Myung-Jae
2023-06-15Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nmEun sung Park; Ha, Won-Yong; Eom, Do Yoon; Ahn, Daehwan; An, Hyuk; Yi, Suhyun; Kim, Kyung-Do; Kim, Jongchae; Choi, Woo-Young; Lee, Myung-Jae
2023-12Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface PropertiesKo, Kyul; Ahn, Daehwan; Suh, Hoyoung; Ju, Byeong-Kwon; Han, Jae Hoon
2021-06Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A ReviewKim, Younghyun; Han, Jae-Hoon; Ahn, Daehwan; Kim, Sanghyeon
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