Showing results 1 to 18 of 18
Issue Date | Title | Author(s) |
---|---|---|
2019-03-01 | 1.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon | Duan, Jianan; Huang, Heming; Dong, Bozhang; Jung, Daehwan; Norman, Justin C.; Bowers, John E.; Grillot, Frederic |
2019-04 | A Review of High-Performance Quantum Dot Lasers on Silicon | Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wan, Yating; Liu, Songtao; Shang, Chen; Herrick, Robert W.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E. |
2019-05 | Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate | Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.; Chen, Baile |
2020-09-21 | Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon | Selvidge, Jennifer; Norman, Justin; Hughes, Eamonn T.; Shang, Chen; Jung, Daehwan; Taylor, Aidan A.; Kennedy, M. J.; Herrick, Robert; Bowers, John E.; Mukherjee, Kunal |
2019-02 | Degradation mechanisms of InAs quantum dot 1.3 mu m laser diodes epitaxially grown on silicon | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Meneghini, Matteo; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Norman, Justin |
2021-02 | Degradation of 1.3 mu m InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers | Buffolo, Matteo; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
2020-02 | Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Meneghini, Matteo; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Norman, Justin |
2020-09-01 | Effect of p-doping on he intensity noise of epitaxial quantum dot lasers on silicon | Duan, Jianan; Zhou, Yueguang; Dong, Bozhang; Huang, Heming; Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wang, Cheng; Bowers, John E.; Grillot, Frederic |
2020-02 | Epitaxial integration of high-performance quantum-dot lasers on silicon | Norman, Justin C.; Bowers, John E.; Wan, Yating; Zhang, Zeyu; Shang, Chen; Selvidge, Jennifer G.; Dumont, Mario; Kennedy, M. J.; Jung, Daehwan; Duan, Jianan; Huang, Heming; Herrick, Robert W.; Grillot, Frederic; Gossard, Arthur C.; Liu, Songtao |
2024-02 | Gradual degradation in InAs quantum dot lasers on Si and GaAs | Hughes, Eamonn T.; Shang, Chen; Selvidge, Jennifer; Jung, Daehwan; Wan, Yating; Herrick, Robert W.; Bowers, John E.; Mukherjee, Kunal |
2019-10 | High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate | Liu, Songtao; Norman, Justin; Dumont, Mario; Jung, Daehwan; Torres, Alfredo; Gossard, Arthur C.; Bowers, John E. |
2019-07-15 | III-V on silicon avalanche photodiodes by heteroepitaxy | Yuan, Yuan; Jung, Daehwan; Sun, Keye; Zheng, Jiyuan; Jones, Andrew H.; Bowers, John E.; Campbell, Joe C. |
2020-03 | Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on Silicon | Buffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
2019-11 | Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications | Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E. |
2019-06 | Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
2020-07-14 | Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon | Mukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; Norman, Justin; Taylor, Aidan A.; Salmon, Mike; Liu, Alan Y.; Bowers, John E.; Herrick, Robert W. |
2019-03-11 | Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain | Vega-Flick, Alejandro; Jung, Daehwan; Yue, Shengying; Bowers, John E.; Liao, Bolin |
2019-12 | The Importance of p-Doping for Quantum Dot Laser on Silicon Performance | Norman, Justin C.; Zhang, Zeyu; Jung, Daehwan; Shang, Chen; Kennedy, M. J.; Dumont, Mario; Herrick, Robert W.; Gossard, Arthur C.; Bowers, John E. |