| - | Carbon doping characteristics in GaAs grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim |
| - | Crystal growth of Si and BP on Si substrates using B2H6-PH3-H2 system | Ju Byeong Kwon; J. H. Ki; C. J. Kim |
| - | Electron diffraction patterns from Si-BP films epitaxially grown on Si substrates | Ju Byeong Kwon; S. R. Rho; C. J. Kim |
| 1987-12 | Fabrication of diodes using the Si-iBP-Si SOI structure | 주병권; S. R. Rho; S. H. Kim; C. J. Kim |
| - | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
| 1992-01 | Fabrication of single quantum well separate confinement heterostructure laser diode grown by MOCVD. | 김성일; 민석기; 김용; 김무성; 엄경숙; C. J. Kim; H. S. Oh |
| 1996-01 | Heat transfer correlation for natural convection in a meniscus-shaped cavity and its application to contact meling process. | 김현석; C. J. Kim; S. T. Ro |
| - | Surface analysis on the gate insulator of metal tip FEA after wet etching | Ju Byeong Kwon; LEE YUN HI; OH MYUNG HWAN; 송만호; Y. H. Jung; J. H. Jung; H. W. Park; C. J. Kim |
