Crystal growth of Si and BP on Si substrates using B2H6-PH3-H2 system

Authors
Ju Byeong KwonJ. H. KiC. J. Kim
Citation
International symposium on the physics of semiconductor and its application, Seoul, Korea., pp.?
Keywords
silicon on insulator; SOI device
URI
https://pubs.kist.re.kr/handle/201004/112829
Appears in Collections:
KIST Conference Paper > Others
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