| 1995-09-15 | DECREASE OF THE NUMBER OF THE ISOLATED EMISSION CENTER MN2+ IN AN AGED ZNS-MN ELECTROLUMINESCENT DEVICE | LEE, YH; KIM, DH; JU, BK; SONG, MH; HAHN, TS; CHOH, SH; OH, MH |
| 1990-03-01 | DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH |
| 1990-02-19 | DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING | CHO, HY; KIM, EK; KIM, Y; MIN, SK; YOON, JH; CHOH, SH |
| 1995-02 | EFFECT OF MULTILAYERED SRS-SRS-CE-SRS PHOSPHOR PREPARED BY MULTISOURCE DEPOSITION METHOD ON THE THIN-FILM ELECTROLUMINESCENT DEVICES | LEE, YH; KIM, DH; JU, BK; YEOM, TH; HAHN, TS; OH, MH; CHOH, SH |
| 1990-02-01 | EFFECTS OF LEAKAGE CURRENT ON ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY SIGNALS FOR MIDGAP LEVELS IN GAAS | KIM, EK; CHO, HY; MIN, SK; CHOH, SH; NAMBA, S |
| 1991-12-01 | ELECTRON-PARAMAGNETIC RESONANCE CHARACTERISTICS OF THE MN ACTIVATOR IN A ZNS-MN ELECTROLUMINESCENT DEVICE | LEE, YH; OH, MH; CHOH, SH |
| 1994-02-01 | LUMINESCENCE AND ELECTRON-PARAMAGNETIC-RESONANCE STUDIES OF WHITE-LIGHT EMITTING SRS-PR,F THIN-FILM ELECTROLUMINESCENT DEVICES | LEE, YH; JU, BK; YEOM, TH; KIM, DH; HAHN, TS; CHOH, SH; OH, MH |
| 1994-06-01 | OBSERVATION OF CR3+ ELECTRON-PARAMAGNETIC-RESONANCE CENTER IN GAAS CO-DOPED WITH CR AND IN | PARK, YJ; YEOM, TH; MIN, SK; PARK, IW; CHOH, SH |
