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DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING

Authors

CHO, HY; KIM, EK; KIM, Y; MIN, SK; YOON, JH; CHOH, SH

Issue Date

1990-02-19

Publisher

AMER INST PHYSICS

Citation

APPLIED PHYSICS LETTERS, v.56, no.8, pp.761 - 763

Keywords

deep levels; GaAs-on-Si; rapid thermal annealing

ISSN

0003-6951

URI

https://pubs.kist.re.kr/handle/201004/147140

DOI

10.1063/1.102705

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KIST Article > Others

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