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Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
2024-01A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology with Doping CompensationLee, Myung-Jae; Karaca, Utku; Kizilkan, Ekin; Bruschini, Claudio; Charbon, Edoardo
2024-01A Gradient-Gated SPAD Array for Non-Line-of-Sight ImagingZhao, Jiuxuan; Gramuglia, Francesco; Keshavarzian, Pouyan; Toh, Eng-Huat; Tng, Michelle; Lim, Louis; Dhulla, Vinit; Quek, Elgin; Lee, Myung-Jae; Charbon, Edoardo
2019-11A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS TechnologyXimenes, Augusto Ronchini; Padmanabhan, Preethi; Lee, Myung-Jae; Yamashita, Yuichiro; Yaung, Dun-Nian; Charbon, Edoardo
2024-01Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD ProcessLiu, Feng; Bruschini, Claudio; Toh, Eng-Huat; Zheng, Ping; Sun, Yongshun; Dhulla, Vinit; Quek, Elgin; Lee, Myung-Jae; Charbon, Edoardo
2019-09First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS TechnologyLee, Myung-Jae; Sun, Pengfei; Pandraud, Gregory; Bruschini, Claudio; Charbon, Edoardo
2022-09Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion TechniqueKizilkan, Ekin; Karaca, Utku; Pesic, Vladimir; Lee, Myung-Jae; Bruschini, Claudio; SpringThorpe, Anthony J.; Walker, Alexandre W.; Flueraru, Costel; Pitts, Oliver J.; Charbon, Edoardo
2022-04-05Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCDKeshavarzian, Pouyan; Gramuglia, Francesco; Kizilkan, Ekin; Bruschini, Claudio; Tan, Shyue Seng; Tng, Michelle; Chong, Daniel; Quek, Elgin; Lee, Myung-Jae; Charbon, Edoardo
2022-09On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR ApplicationsZhao, Jiuxuan; Milanese, Tommaso; Gramuglia, Francesco; Keshavarzian, Pouyan; Tan, Shyue Seng; Tng, Michelle; Lim, Louis; Dhulla, Vinit; Quek, Elgin; Lee, Myung-Jae; Charbon, Edoardo
2023-04Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltageHa, Won-yong; Park, Eunsung; Yoon, Eom Do; Park, Hyo-Sung; Chong, Daniel; Tan, Shyue Seng; Tng, Michelle; Quek, Elgin; Bruschini, Claudio; Charbon, Edoardo; Choi, Woo-Young; Lee, Myung-Jae
2024-01SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDPWon-Yong Ha; Eun sung Park; Eom Do Yoon; Sung, Park Hyo; Gramuglia, Francesco; Keshavarzian, Pouyan; Kizilkan, Ekin; Bruschini, Claudio; Chong, Daniel; Tan, Shyue Seng; Tng, Michelle; Quek, Elgin; Charbon, Edoardo; Choi, Woo-Young; Lee, Myung-Jae
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