| 1999-03-12 | beta-SiC thin film growth using microwave plasma activated CH4-SiH4 sources | Kim, HS; Park, YJ; Choi, IH; Baik, YJ |
| 2000-11 | Characteristics of carbon incorporated BN films deposited by radio frequency PACVD | Kim, HS; Choi, IH; Baik, YJ |
| 2004-12 | Characteristics of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors | Han, YH; Choi, IH; Moon, S; Son, CS |
| 1999-07 | Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy | Kim, JW; Son, CS; Choi, IH; Park, YK; Kim, YT; Ambacher, O; Stutzmann, M |
| 2001-07 | Crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si | Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JY |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD | Son, CS; Cho, S; Choi, IH; Kim, SI; Kim, YT; Chung, SW |
| 1997-08-01 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Kim, Y; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 1997-10 | Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | Son, SC; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2004-12 | Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition | Son, CS; Kim, SM; Kim, YH; Kim, SI; Kim, YT; Yoon, KH; Choi, IH; Lopez, HC |
| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1999-09-15 | Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure | Kim, YT; Shin, DS; Park, YK; Choi, IH |
| 2003-11 | Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Choi, IH |
| 1998-09 | Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor | Shin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH |
| 2001-07 | Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN | Kim, JW; Kim, SI; Kim, YT; Kim, S; Sung, MY; Choi, IH |
| 2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
| 2001-12 | Electrical properties of cobalt contact to p-GaN | Kim, JW; Won, JH; Park, SY; Kim, SI; Choi, IH |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 1998-08 | Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory | Shin, DS; Lee, HN; Kim, YT; Choi, IH; Kim, BH |
| 2001-12 | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | Choi, HS; Park, KS; Hur, JS; Choi, IH; Kim, YT; Kim, SI |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2005-06-20 | Enhanced characteristics of an uncooled microbolometer using vanadium-tungsten oxide as a thermometric material | Han, YH; Kim, KT; Shin, HJ; Moon, S; Choi, IH |
| 2004-11 | Enhancement of electrical properties of Pt/SrBi2Nb2O9/Pt structures by remote oxygen plasma annealing | Kim, IS; Kim, YM; Choi, IH; Kim, SI; Kim, YH; Yoo, DC; Lee, JY; Son, CS |
| 2004-12 | Etch stop characteristics of SrBi2Ta2O9 thin film by using CeO2 buffer layer | Kwon, YS; Il Shim, S; Kim, SI; Kim, YH; Choi, IH |
| 2000-08-07 | Evaluations of strains in fused layers using patterned substrates | Hwang, SM; Lee, JY; Park, SK; Hyon, CK; Kim, Y; Park, YJ; Kim, EK; Choi, IH |
| 2005-09-23 | Fabrication and characterization of bolometric oxide thin film based on vanadium-tungsten alloy | Han, YH; Kim, KT; Chi-Anh, N; Shin, HJ; Choi, IH; Moon, S |
| 2004-12 | Fabrication of a surface micromachined uncooled microbolometer based on the V2O5/V/V2O5 sandwich structure | Han, YH; Choi, IH; Son, CS; Kim, KT; Anh, NC; Shin, HJ; Moon, S |
| 2003-02-03 | Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers | Han, YH; Choi, IH; Kang, HK; Park, JY; Kim, KT; Shin, HJ; Moon, S |
| 2000-09 | Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer | Hwang, SM; Choi, IH; Park, YJ; Hyon, CK; Kim, EK; Min, SK |
| 2000-11 | Growth behavior of GaAs/AlGaAs multi-layers grown on U-grooved GaAs fusion layer on InP substrate | Hwang, SM; Park, YJ; Nah, J; Kim, EK; Choi, IH |
| 2004-11-01 | Hydrogen-induced atomic deformation in SrBi2Nb2O9 perovskite structure | Kim, IS; Choi, IH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
