Enhancement of electrical properties of Pt/SrBi2Nb2O9/Pt structures by remote oxygen plasma annealing

Abstract

The effect of remote oxygen plasma rapid thermal annealing (RTA) on the characteristics of Pt/SrBi2Nb2O9(SBN)/Pt capacitors is investigated. Remote oxygen plasma RTA can provide reactive oxygen, leading to improving the oxygen deficiencies. It is advantageous to reduce the thermal budget, resulting in smoother surface morphology. In addition, electrical properties of SBN films are enhanced, even at relatively lower temperature than the conventional furnace annealing in oxygen ambient. The film annealed by remote oxygen plasma RTA exhibits larger remnant polarization (2P(r)) of 22.6 muC/cm(2) at +/- 5 V and lower leak-age current density of 1.21 X 10(-8) A/cm(2) at the applied voltage of 5 V, compared with furnace-annealed films. Therefore, remote oxygen plasma RTA is considered to be a promising method to reduce the thermal budget as well as to enhance electrical properties of the SBN films.