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Showing results 1 to 10 of 10

Issue Date	Title	Author(s)
-	An Experimental Analysis of the Thermo-optic Characteristics of PbTe Thin Films by a Real Time Electrical-Optical Characterization	Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; D.H.Kim; CHEONG, BYUNG KI
-	An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin films	Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI
-	An NSOM measurement of the near-field intensity profile of transmitted light due to a PbTe thin film material for super-resolution optical memory	LEE, TAEK SUNG; Lee Hyun Seok; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; S.T.Whang; K.M.Cho; CHEONG, BYUNG KI
-	Characterization of the super-resolution effects of PbTe thin films	Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI
-	Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode	Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Ki-Bum Kim
-	Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristics	Dong-Ho Ahn; Tae-Yon Lee; Hyungoo Jun; Dongbok Lee; Dae-Hwan Kang; Jeung-hyun Jeong; CHEONG, BYUNG KI; Ki-Bum Kim
-	Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode	Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim
-	On the kinetic characteristics of the set process in a Non-volatile Phase-Change memory	Dae-Hwan Kang; CHEONG, BYUNG KI; Jeung-hyun Jeong; LEE, TAEK SUNG; Kim Inho; KIM, WON MOK; Ki-Bum Kim
-	Phase Change Material for Potential Use in High density Non-volatile Memory	CHEONG, BYUNG KI; Kim Inho; Jeung-hyun Jeong; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Dae-Hwan Kang; Hee-Suk Chung; Kim Seul-Cham; Kyu Hwan Oh
-	Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure	Dae-Hwan Kang; KIM, TAE-GYUN; JUNG, HAN-JU; LEE, TAEK SUNG; Kim In-ho; LEE, KYEONG SEOK; KIM, WON MOK; CHEONG, BYUNG KI; AHN, DONG-HO; KWON, MIN-HO; KWON, HYUK-SOON; KIM, KI-BUM

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