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Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode

Authors

Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Ki-Bum Kim

Citation

2006 NVSMW (Non-Volatile Semiconducting Memory Workshop)

URI

https://pubs.kist.re.kr/handle/201004/104170

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KIST Conference Paper > Others

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