| 2007-10 | Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots | Arpatzanis, N.; Tassis, D. H.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
| 2008-12 | Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2008 | QD technology and market prospects in the sectors of space exploration, biomedicine, defense, and security | Charitidis, C. A.; Golnas, A.; Chouliaras, F.; Arpatzanis, N.; Dimitriadis, C. A.; Lee, J. I.; Bakolias, C. |
| 2009-04 | Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Konstantinidis, G.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
