Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

Authors
Arpatzanis, N.Tassis, D. H.Dimitriadis, C. A.Charitidis, C.Song, J. D.Choi, W. J.Lee, J. I.
Issue Date
2007-10
Publisher
IOP PUBLISHING LTD
Citation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.22, no.10, pp.1086 - 1091
Abstract
Schottky contacts on n-type GaAs with embedded InAs quantum dots (QDs) were studied by current-voltage (I-V) and low-frequency noise measurements. For comparison, diodes not containing QDs were investigated as reference devices. A wide distribution of the ideality factor was observed, correlated with the level of the leakage current. Reverse I-V characteristics on the logarithmic scale indicate that the space-charge limited current dominates the carrier transport in these diodes. In all diodes, the reverse current noise spectra show 1/f behaviour, attributed to traps uniformly distributed in energy within the band-gap of the GaAs capping layer. Depth profiling measurements of the 1/f noise power spectral density demonstrate the impact of the QDs on these traps. In diodes containing QDs, in addition to the 1/f noise, a generation-recombination noise is found originating from a deep trap level localized in the vicinity of the QD plane.
Keywords
1/F NOISE; CONTACTS; 1/F NOISE; CONTACTS; InAs; quantum dots; noise
ISSN
0268-1242
URI
https://pubs.kist.re.kr/handle/201004/134092
DOI
10.1088/0268-1242/22/10/002
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KIST Article > 2007
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