| 1999 | Aligned In0.5Ga0.5As quantum dots on laser patterned GaAs substrate | Park, SK; Hyon, CK; Min, BD; Kim, HJ; Hwang, SM; Kim, EK; Lee, HK; Lee, C; Kim, Y |
| 2002-11-01 | Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice | Kim, KM; Park, YJ; Park, YM; Hyon, CK; Kim, EK; Park, JH |
| 2000-10-16 | Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs | Hyon, CK; Choi, SC; Song, SH; Hwang, SW; Son, MH; Ahn, D; Park, YJ; Kim, EK |
| 2000 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Min, BD; Park, YJ; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
| 2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
| 1999-07-12 | Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 1998-12 | Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots | Cho, S; Hyon, CK; Kim, EK; Min, SK |
| 2000-08-07 | Evaluations of strains in fused layers using patterned substrates | Hwang, SM; Lee, JY; Park, SK; Hyon, CK; Kim, Y; Park, YJ; Kim, EK; Choi, IH |
| 1999-08 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Hyon, CK; Park, JH; Hwang, SW; Ahn, D; Son, MH; Min, BD; Kim, Y; Kim, EK |
| 2000-09 | Formation of high quality GaAs epilayers on InP substrates by using a patterned GaAs fusion layer | Hwang, SM; Choi, IH; Park, YJ; Hyon, CK; Kim, EK; Min, SK |
| 2001-07 | Influence of growth conditions on the formation and the optical properties of self-assembled InAs quantum dots on (001)GaAs | Nah, J; Park, SH; Kim, KM; Park, YJ; Hyon, CK; Kim, EK |
| 2001-07 | Nano mold lithography for 40-nm patterns | Park, CM; Choi, BH; Hyon, CK; Hwang, SW; Ahn, D; Kim, EK |
| 1999-12 | Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Ahn, D; Kim, Y; Kim, EK |
| 2001-09 | Patterned formation of InAs QDs for single-electron device applications | Son, MH; Choi, BH; Hwang, SW; Ahn, D; Hyon, CK; Kim, EK; Kim, Y; Lim, JS |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2003-01 | Shape and interband transition behavior of InAs quantum dots dependent on number of stacking cycles | Kim, KM; Park, YJ; Roh, CH; Park, YM; Kim, EK; Hyon, CK; Park, JH; Kim, TW |
