| 2024-04 | Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO2 interlayer | Choi, Cheol Hee; Kim, Taikyu; Kim, Min Jae; Kim, Gwang-Bok; Oh, Jeong Eun; Jeong, Jae Kyeong |
| 2023-07 | Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors | Kim, Gwang-Bok; Kim, Taikyu; Choi, Cheol Hee; Chung, Sang Won; Jeong, Jae Kyeong |
| 2024-05 | Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer | Jeong, Joo Hee; Yoon, Seong Hun; Lee, Seung Hee; Kuh, Bong Jin; Kim, Taikyu; Jeong, Jae Kyeong |
| 2024-05 | Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer | Jeong, Joo Hee; Seo, Seung Wan; Kim, Dongseon; Yoon, Seong Hun; Lee, Seung Hee; Kuh, Bong Jin; Kim, Taikyu; Jeong, Jae Kyeong |
| 2024-05 | Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors | Kim, Gwang-Bok; Kim, Taikyu; Bang, Seon Woong; Hur, Jae Seok; Choi, Cheol Hee; Kim, Min Jae; Jeong, Jae Kyeong |
