Browsing byAuthorJung, Daehwan
Showing results 1 to 30 of 41
| Issue Date | Title | Author(s) |
|---|---|---|
| 2019-03-01 | 1.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon | Duan, Jianan; Huang, Heming; Dong, Bozhang; Jung, Daehwan; Norman, Justin C.; Bowers, John E.; Grillot, Frederic |
| 2019-05 | 16.8%-Efficient n(+)/p GaAs Solar Cells on Si With High Short-Circuit Current Density | Fan, Shizhao; Jung, Daehwan; Sun, Yukun; Li, Brian D.; Martin-Martin, Diego; Lee, Minjoo L. |
| 2020-06-01 | 40 Gbit/s waveguide photodiode using III-V on silicon heteroepitaxy | Sun, Keye; Gao, Junyi; Jung, Daehwan; Bowers, John; Beling, Andreas |
| 2019-04 | A Review of High-Performance Quantum Dot Lasers on Silicon | Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wan, Yating; Liu, Songtao; Shang, Chen; Herrick, Robert W.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E. |
| 2019-03 | Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus | Chen, Chen; Chen, Feng; Chen, Xiaolong; Deng, Bingchen; Eng, Brendan; Jung, Daehwan; Guo, Qiushi; Yuan, Shaofan; Watanabe, Kenji; Taniguchi, Takashi; Lee, Minjoo L.; Xia, Fengnian |
| 2021-02 | Comparative study of metamorphic InAs layers grown on GaAs and Si for mid-infrared photodetectors | Ryu, Geunhwan; Kang, Soo Seok; Han, Jae-Hoon; Chu, Rafael Jumar; Jung, Daehwan; Choi, Won Jun |
| 2019-05 | Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate | Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.; Chen, Baile |
| 2020-09-21 | Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon | Selvidge, Jennifer; Norman, Justin; Hughes, Eamonn T.; Shang, Chen; Jung, Daehwan; Taylor, Aidan A.; Kennedy, M. J.; Herrick, Robert; Bowers, John E.; Mukherjee, Kunal |
| 2019-02 | Degradation mechanisms of InAs quantum dot 1.3 mu m laser diodes epitaxially grown on silicon | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Meneghini, Matteo; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Norman, Justin |
| 2021-02 | Degradation of 1.3 mu m InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers | Buffolo, Matteo; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
| 2022-06 | Delta-Doping for Enhanced III-V Tunnel Junction Performance | Sun, Yukun; Fan, Shizhao; Jung, Daehwan; Hool, Ryan D.; Li, Brian; Vaisman, Michelle; Lee, Minjoo |
| 2019-06 | Delta-doping for enhanced tunnel junction performance and thermal stability | Sun, Yukun; Fan, Shizhao; Jung, Daehwan; Lee, Minjoo Larry; Li, Brian; Vaisman, Michelle; Hool, Ryan |
| 2020-02 | Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: role of defect diffusion processes | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Meneghini, Matteo; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Norman, Justin |
| 2019-02-28 | Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP | Jung, Daehwan; Yu, Lan; Dev, Sukrith; Wasserman, Daniel; Lee, Minjoo Larry |
| 2020-09-01 | Effect of p-doping on he intensity noise of epitaxial quantum dot lasers on silicon | Duan, Jianan; Zhou, Yueguang; Dong, Bozhang; Huang, Heming; Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wang, Cheng; Bowers, John E.; Grillot, Frederic |
| 2022-09 | Enhanced Photoluminescence of 1.3μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission | Kim, Yeonhwa; Chu, Rafael Jumar Abella; Ryu, Geunhwan; Woo, Seungwan; Lung, Quang Nhat Dang; Ahn, Dae-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan |
| 2020-02 | Epitaxial integration of high-performance quantum-dot lasers on silicon | Norman, Justin C.; Bowers, John E.; Wan, Yating; Zhang, Zeyu; Shang, Chen; Selvidge, Jennifer G.; Dumont, Mario; Kennedy, M. J.; Jung, Daehwan; Duan, Jianan; Huang, Heming; Herrick, Robert W.; Grillot, Frederic; Gossard, Arthur C.; Liu, Songtao |
| 2020-11-23 | Flexible GaAs photodetector arrays hetero-epitaxially grown on GaP/Si for a low-cost III-V wearable photonics platform | Hong, Namgi; Chu, Rafael Jumar; Kang, Soo Seok; Ryu, Geunhwan; Han, Jae-Hoon; Yu, Ki Jun; Jung, Daehwan; Choi, Won Jun |
| 2023-02 | GaAs/Si Tandem Solar Cells with an Optically Transparent InAlAs/GaAs Strained Layer Superlattices Dislocation Filter Layer | Kim, Yeonhwa; Madarang May Angelu; Ju Eun Kyo; Laryn Tsimafei; Chu, Rafael Jumar; Kim Tae Soo; Ahn, Dae-Hwan; Kim, Taehee; Lee, In-Hwan; Choi, Won Jun; Jung, Daehwan |
| 2024-02 | Gradual degradation in InAs quantum dot lasers on Si and GaAs | Hughes, Eamonn T.; Shang, Chen; Selvidge, Jennifer; Jung, Daehwan; Wan, Yating; Herrick, Robert W.; Bowers, John E.; Mukherjee, Kunal |
| 2023-04 | Graphene/III-V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer | Lung, Quang Nhat Dang; Chu, Rafael Jumar; Kim, Yeonhwa; Laryn, Tsimafei; Madarang, May Angelu; Kovalchuk, Oleksiy; Song, Yong-Won; Lee, In-Ho; Choi, Changsoon; Choi, Won Jun; Jung, Daehwan |
| 2019-07 | Growth of Broadband Gain Quantum Dot Mode Locked Laser on Si with Varied InGaAs Well Thickness | Jung, Daehwan; Norman, Justin; Liu, Songtao; Bowers, John; Wan, Yating; Gossard, Arthur; Shang, Chen |
| 2020-02 | High-performance mode-locked lasers on silicon | Liu, Songtao; Bowers, John; Norman, Justin C.; Jung, Daehwan; Dumont, Mario; Shang, Chen; Wan, Yating; Kennedy, M. J.; Dong, Bozhang; Auth, Dominik; Breuer, Stefan; Grillot, Frederic; Chow, Weng; Gossard, Arthur; Wu, Xinru |
| 2019-10 | High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate | Liu, Songtao; Norman, Justin; Dumont, Mario; Jung, Daehwan; Torres, Alfredo; Gossard, Arthur C.; Bowers, John E. |
| 2023-08 | High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications | Ahn, DaeHwan; Jeon, Sunghan; Suh, Hoyoung; Woo, Seungwan; Chu, Rafael Jumar; Jung, Daehwan; Choi, Won Jun; Park, Donghee; Song, Jin-Dong; Choi, Woo-Young; Han, Jae-Hoon |
| 2020-05 | High-Speed InGaAs/InAlGaAs Waveguide Photodiodes Grown on Silicon by Heteroepitaxy | Gao, Junyi; Sun, Keye; Beling, Andreas; Bowers, John; Jung, Daehwan |
| 2019-07-15 | III-V on silicon avalanche photodiodes by heteroepitaxy | Yuan, Yuan; Jung, Daehwan; Sun, Keye; Zheng, Jiyuan; Jones, Andrew H.; Bowers, John E.; Campbell, Joe C. |
| 2024-09 | Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple-Junction Solar Cells | Kim, Yeonhwa; Shin, Hyun-Beom; Ju, Eunkyo; Madarang, May Angelu; Chu, Rafael Jumar; Laryn, Tsimafei; Kim, Taehee; Lee, In-Hwan; Kang, Ho Kwan; Choi, Won Jun; Jung, Daehwan |
| 2024-07 | Improving the Open-Circuit Voltage of III-V Layer-Filtered Si Subcells for Monolithic III-V/Si Tandem Solar Cells | Ju, Eunkyo; Madarang, May Angelu; Kim, Yeonhwa; Chu, Rafael Jumar; Laryn, Tsimafei; Kim, Younghyun; Kim, Inho; Kim, Tae Soo; Jeon, Sunghan; Lee, In-Hwan; Han, Jae-Hoon; Choi, Won Jun; Jung, Daehwan |
| 2020-03 | Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on Silicon | Buffolo, Matteo; Samparisi, Fabio; Rovere, Lorenzo; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
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