Delta-doping for enhanced tunnel junction performance and thermal stability

Authors
Sun, YukunFan, ShizhaoJung, DaehwanLee, Minjoo LarryLi, BrianVaisman, MichelleHool, Ryan
Issue Date
2019-06
Publisher
IEEE
Citation
IEEE 46th Photovoltaic Specialists Conference (PVSC), pp.3211 - 3214
Abstract
In this work, we show that delta-doping can dramatically improve the performance of tunnel junctions. As an example, one of our delta-doped tunnel junctions achieved a peak current of 3.59 kA/cm(2) , while its structurally identical counterpart without delta-doping reached a peak current of just 7.32 mA/cm(2) . Several different tunnel junction designs were explored with differing amounts of optical absorption, and all showed significant improvement from delta-doping. With the benefit of delta doping, all tunnel junctions investigated here are able to survive top cell growth conditions and additional rapid thermal annealing.
ISSN
0160-8371
URI
https://pubs.kist.re.kr/handle/201004/114080
Appears in Collections:
KIST Conference Paper > 2019
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