2006-01-09 | Atomic arrangement of Al-induced clusters on Si(001) surface at high temperature | Seo, JH; Park, JY; Jung, SK; Yoo, KH; Whang, CN; Kim, SS; Choi, DS; Chae, KH |
1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
1999-12 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Song, SH; Hwang, SW; Park, JH; Kim, Y; Kim, EK |
1999-08 | Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots | Jung, SK; Hyon, CK; Park, JH; Hwang, SW; Ahn, D; Son, MH; Min, BD; Kim, Y; Kim, EK |
2000-05 | Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot | Jung, SK; Hwang, SW; Ahn, D; Park, JH; Kim, Y; Kim, EK |
1998-10-26 | Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material | Hahn, CK; Park, YJ; Kim, EK; Min, SK; Jung, SK; Park, JH |
1999-09-15 | Stress-driven formation of InGaAs quantum dots on GaAs with sub-micron platinum pattern | Son, MH; Jung, SK; Min, BD; Hyun, CK; Choi, BH; Kim, EK; Kim, Y; Lim, JS |