Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices

Abstract

Electrical properties of the electron-beam induced cal bon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.