Direct electronic transport through an ensemble of InAs self-assembled quantum dots

Abstract

Electronic transport properties through an ensemble of InAs self-assembled quantum dots are reported. A metal-semiconductor-metal diode with self-assembled quantum dots has been fabricated. Clear staircases are observed in the current-voltage characteristics measured from the diode, and several peak structures are identified in the differential conductance. These conductance peaks are interpreted as due to resonant tunneling through the energy states of the self-assembled quantum dots. (C) 1999 American Institute of Physics. [S0003-6951(99)01605-8].