| 1994-08 | CARBON DOPING CHARACTERISTICS OF GAAS AND AL0.3GA0.7AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4 | KIM, SI; KIM, Y; KIM, MS; KIM, CK; MIN, SK; LEE, C |
| 1994-01 | CEREBRAL PARAGONIMIASIS IN EARLY ACTIVE STAGE - CT AND MR FEATURES | CHA, SH; CHANG, KH; CHO, SY; HAN, MH; KONG, Y; SUH, DC; CHOI, CG; KANG, HK; KIM, MS |
| 1993-01 | CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESS | KIM, SI; EOM, KS; KIM, Y; KIM, MS; MIN, SK; LEE, C; KWAK, MH; MA, DS |
| 1995-02-01 | CROSS-SECTIONAL OBSERVATION OF NACLO STAIN-ETCHED AL0.5GA0.5AS/GAAS MULTILAYER BY ATOMIC-FORCE MICROSCOPY | KIM, HJ; KIM, JS; KIM, Y; KIM, MS; MIN, SK |
| 1990-03-01 | DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, EK; CHO, HY; KIM, Y; KIM, MS; KIM, HS; MIN, SK; YOON, JH; CHOH, SH |
| 1991-02 | DISLOCATION-ACCELERATED DIFFUSION OF SI IN DELTA-DOPED GAAS GROWN ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC |
| 1992-12 | ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, TW; KIM, Y; KIM, MS; KIM, EK; MIN, SK |
| 1993-08 | ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, CC |
| 1993-11 | EXPERIMENTAL AND THEORETICAL PHOTOLUMINESCENCE STUDY OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; KIM, MS; MIN, SK; LEE, CC |
| 1995-11 | FACET EVOLUTION OF CCL4-DOPED AL0.5GA0.5AS/GAAS MULTILAYERS DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1994-10-03 | GAS-CHROMATOGRAPHIC ELECTRON-IMPACT CHEMICAL-IONIZATION MASS-SPECTROMETRIC IDENTIFICATION OF CINMETACIN AND ITS METABOLITES IN HUMAN URINE | MYUNG, SW; KIM, MS; YOON, CN; PARK, JS; AHN, WS |
| 1994-09 | GENERAL PHARMACOLOGY OF CIS-MALONATO[(4R,5R)-4,5-BIS(AMINOMETHYL)-2-ISOPROPYL-1,3-DIOXOLANE]PLAT INUM (II) | KIM, DK; AHN, JS; RYU, G; KIM, KH; PARK, CW; KIM, MS; CHUNG, MH; SHIN, SG; SUH, YH; KIM, YS |
| 1995-01 | GROWTH-BEHAVIOR ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
| 1993-12 | HALL-MOBILITY AND TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF CARBON-DOPED GAAS | KIM, SI; KIM, Y; LEE, MS; KIM, MS; MIN, SK; LEE, CC |
| 1993-05-01 | LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, C |
| 1995-07 | ORIGIN OF CRYSTALLOGRAPHIC TILT IN INGAAS/GAAS(001) HETEROSTRUCTURE | KANG, JM; SON, CS; KIM, MS; KIM, Y; MIN, SK; KIM, CS |
| 1993-11-29 | PROPERTIES OF THE QUANTUM WIRES GROWN ON V-GROOVED AL0.3GA0.7AS/GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | LEE, MS; KIM, Y; KIM, MS; KIM, SI; MIN, SK; KIM, YD; NAHM, S |
| 1990-09 | SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION | KIM, Y; KIM, MS; MIN, SK; LEE, CC; YOO, KH |
| 1994-05 | SPIN-WAVE STIFFNESS CONSTANTS OF AMORPHOUS FE-ZR-B-NB ALLOYS | YU, SC; KIM, KS; KIM, MS; KIM, KY; NOH, TH |
| 1990-03 | SYSTEMATIC ANALYSIS OF DIURETIC DOPING AGENTS BY HPLC SCREENING AND GC/MS CONFIRMATION | PARK, SJ; PYO, HS; KIM, YJ; KIM, MS; PARK, JS |
| 1995-03 | TEMPERATURE-DEPENDENT ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; SON, CS; LEE, MS; KIM, Y; KIM, MS; MIN, SK |
| 1995-09-25 | THE FABRICATION OF QUANTUM-WIRE STRUCTURES THROUGH APPLICATION OF CCL4 TOWARDS LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1994-05 | THE FACET EVOLUTION DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
