Showing results 1 to 10 of 10
Issue Date | Title | Author(s) |
---|---|---|
2022-04 | An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode | Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon |
2024-11 | Channel Mobility With Higher-k Doped-HfO₂ for CMOS Logic | Kuk, Song-Hyeon; Ko, Kyul; Kim, Bong Ho; Lim, Hyeong-Rak; Kim, Joon Pyo; Han, Jae-Hoon; Kim, Sang-Hyeon |
2023-01 | Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference | Kim, Joon Pyo; Kim, Seong Kwang; Park, Seohak; Kuk, Song-hyeon; Kim, Tae yoon; Kim, Bong Ho; Ahn, Seong-Hun; Cho, Yong-Hoon; Jeong, YeonJoo; Choi, Sung-Yool; Kim, Sanghyeon |
2023-04 | Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2023-08 | Examination of Ferroelectric FET for "Cold" Nonvolatile Memory | Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon |
2023-01 | Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization | Kuk, Song-Hyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon |
2023-05 | Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2022-09 | Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties | Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2023-05 | Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND | Kuk, Song-Hyeon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Junpyo; Kim, Sang-Hyeon |
2023-06-11 | Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si | Kuk, Song-Hyeon; Han, Jae Hoon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Joon Pyo; Kim, Sang-Hyeon |