Browsing byAuthorKim, Bong Ho

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 10 of 10

Issue DateTitleAuthor(s)
2022-04An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping ModeKuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon
2024-11Channel Mobility With Higher-k Doped-HfO₂ for CMOS LogicKuk, Song-Hyeon; Ko, Kyul; Kim, Bong Ho; Lim, Hyeong-Rak; Kim, Joon Pyo; Han, Jae-Hoon; Kim, Sang-Hyeon
2023-01Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond InferenceKim, Joon Pyo; Kim, Seong Kwang; Park, Seohak; Kuk, Song-hyeon; Kim, Tae yoon; Kim, Bong Ho; Ahn, Seong-Hun; Cho, Yong-Hoon; Jeong, YeonJoo; Choi, Sung-Yool; Kim, Sanghyeon
2023-04Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect TransistorsKim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon
2023-08Examination of Ferroelectric FET for "Cold" Nonvolatile MemoryKuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon
2023-01Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall PolarizationKuk, Song-Hyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; Kim, Sang-Hyeon
2023-05Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention ImprovementKim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon
2022-09Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric propertiesKim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon
2023-05Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NANDKuk, Song-Hyeon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Junpyo; Kim, Sang-Hyeon
2023-06-11Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on SiKuk, Song-Hyeon; Han, Jae Hoon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Joon Pyo; Kim, Sang-Hyeon

BROWSE