| 1998-07 | Characterization of the nitrided GaAs thin layers after rapid thermal annealing by using raman scattering | Koh, E.K.; Park, Y.J.; Kim, E.K.; Choh, S.H. |
| 1998-07 | Effects of Rapid Thermal Annealing on the Structural and Optical Properties of InAs/GaAs Self-Assembled Quantum Dots | Cho, S.; Hyon, C.K.; Kim, E.K.; Min, S.-K. |
| 1998-07 | Electrical properties of e-beam exposed silicon dioxides and their application to nano-devices | Choi, B.H.; Jung, S.K.; Kim, S.I.; Hwang, S.W.; Park, J.H.; Kim, Y.; Kim, E.K.; Min, S.-K. |
| 2004-12 | Energy levels of InAs/lnP QD system with GaAs and InGaAs insertion layers by C-V and DLTS methods | Kim, J.S.; Kim, E.K.; Park, K.; Yoon, E.; Park, I.-W.; Park, Y.J. |
| 1999-12 | Fabrication of AlGaAs/GaAs heteroface solar cells | Kim, H.-J.; Park, Y.K.; Kim, S.-I.; Kim, E.K.; Kim, T.-W. |
| 1997-12 | Formation of silicon nanocrystallites by electron cyclotron resonance chemical vapor deposition and ion beam assisted electron beam deposition | Kim, E.K.; Choi, W.Ch.; Min, S.-K.; Park, Ch.-Y. |
| 1991-05 | Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by metalorganic chemical vapor deposition | Kim, E.K.; Cho, H.Y.; Kim, Y.; Kim, H.S.; Kim, M.S.; Min, S.-K. |
| 2001-11 | Improved crystalline quality of GaN by substrate ion beam pre-treatment | Byun, D.; Cho, Y.S.; Kim, J.; Park, Y.J.; Kim, E.K.; Kim, G.; Koh, E.-K.; Min, S.-K. |
| 2001-11 | Linearized multiple quantum well electro-absorption modulator by quantum well intermixing technique | Choi, W.J.; Kim, W.S.; Han, I.K.; Park, Y.J.; Kim, E.K.; Lee, J.I.; Yi, J.C. |
| 1999-07 | Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope | Hyon, C.K.; Choi, S.C.; Hwang, S.W.; Ahn, D.; Kim, Y.; Kim, E.K. |
| 1999-12 | Nano-structure patterning and manipulation using a tapping mode atomic force microscope | Hyon, C.K.; Choi, S.C.; Hwang, S.W.; Ahn, D.; Kim, Y.; Kim, E.K. |
| 2000-07 | Selective growth of InAs quantum dots using AFM-patterned GaAs substrate | Hyon, C.K.; Choi, S.C.; Song, S.-H.; Hwang, S.W.; Min, B.D.; Ahn, D.; Park, Y.J.; Kim, E.K. |
| 1998-07 | Selectively formed InAs quantum dot arrays for device application | Hahn, C.K.; Park, Y.J.; Park, K.H.; Hyun, C.K.; Kim, E.K.; Min, S.-K.; Park, J.H. |
| 1998-07 | Self-assembled quantum dot single electron devices | Jung, S.K.; Choi, B.H.; Kim, S.I.; Hyun, C.K.; Min, B.D.; Hwang, S.W.; Park, J.H.; Kim, Y.; Kim, E.K.; Min, S.-K. |
| 1997-12 | Visible photoluminescence from an anodized polycrystalline silicon thin film/silicon structure | Lyou, J.; Kim, E.K.; Min, S.-K.; Kang, K. |
