Browsing byAuthorKim, Jae Soo

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Showing results 1 to 30 of 34

Issue DateTitleAuthor(s)
-Ar and H2 gas effects of SiO2 nanowires growthKIM NA-RI; Kim, Jae Soo; 변동진; 노대호; 양재웅; 이재훈
-Caracterization of SiC nanowire Grown by APCVD using single precursor노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Characteristics of SiC film using TetramethylsilaneKIM NA-RI; Kim, Jae Soo; 노대호; 이재훈; Ahn myoung-won; 변동진
-Effects of metal catayst to SiC nanowire growth노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Effects of the catalyst to growth of the SiC nanowire and CNTs노대호; 변동진; KIM NA-RI; Kim, Jae Soo; 양재웅; 이재훈
-Fabrication of SiCxNy nanowires by VLS growth mechanismAhn myoung-won; Kim, Jae Soo; 양재웅; 노대호; KIM NA-RI; 이재훈
-Gas effect of the SiO2 nanowire growthKIM NA-RI; 변동진; 노대호; Kim, Jae Soo; 이재훈; 양재웅
-Growh and characterization of SiC nanowires노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; KIM NA-RI; 진정근
-Growth and characteristics of SiCN nanowire노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; KIM NA-RI; 진정근
-Growth and Characteristics of Silica nanowires Grown by Vapor Evaporation method노대호; Kim, Jae Soo; 변동진; 양재웅; 진정근; KIM NA-RI
-Growth and characterization of SiC film using single precursorsKIM NA-RI; Kim, Jae Soo; 변동진; 이재훈; 양재웅; 노대호; 진정근
-Growth and characterization of SiC nanowires노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; KIM NA-RI; 진정근
-Growth and characterization of SiOx nanowires by VLS and SLS growth mechanism노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Growth and characterizaton of SiC film using single precursorsKIM NA-RI; Kim, Jae Soo; 변동진; 이재훈; 노대호; 진정근
-Growth of Si nanowires by SLS (Solid-Liquid-Solid) growth mechanismKIM NA-RI; Kim, Jae Soo; 변동진; 진정근; 노대호; 양재웅
-Growth of SiC nanowire using HMDS and APCVD on Si substrate노대호; Kim, Jae Soo; 변동진; 이재훈; KIM NA-RI
-Growth of SiC, SiCN nanowires using CNTs노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Growth of SiCN nanowires grown by CVD using metal catalyst노대호; Kim, Jae Soo; 변동진; 이재훈; KIM NA-RI; Ahn myoung-won; 양재웅
-Growth of SiOx and Si nanowires by vapor evaporation method using metal catalyst노대호; Kim, Jae Soo; 변동진; 양재웅; 진정근; KIM NA-RI
-Growth of SiOx nanowires in the various gas atmospheres노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅
-Growth of the SiC nanowire using CNT substrates노대호; 변동진; KIM NA-RI; 양재웅; Kim, Jae Soo; 이재훈
-SiC nanowire Growth by SLS Growth mechanism노대호; Kim, Jae Soo; 변동진; 양재웅; 진정근; KIM NA-RI
-SIC nanowire Growth on Si and Graphite Substrates by APCVD and TTIP노대호; Kim, Jae Soo; 변동진; 양재웅; 진정근; KIM NA-RI
-Synthesis of SiC nanotube by CNT-confined reactionKIM NA-RI; Kim, Jae Soo; 변동진; 노대호; 양재웅; 진정근
-Synthesis of SiC nanotubes by CNT confined reactionKIM NA-RI; Kim, Jae Soo; 변동진; 진정근; 노대호; 양재웅
-Synthesis of SiO2 nanowires by vapor deposition methods노대호; 변동진; 진정근; KIM NA-RI; Kim, Jae Soo; 양재웅
-The effect of gas variations to the growth of SiO2 nanowire노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; 진정근; KIM NA-RI
-(Undefined)노대호; 변동진; KIM NA-RI; Kim, Jae Soo; 양재웅; 이재훈
-(Undefined)KIM NA-RI; 변동진; 진정근; 노대호; Kim, Jae Soo; 이재훈
-(Undefined)노대호; 변동진; KIM NA-RI; Kim, Jae Soo; 양재웅; 이재훈

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