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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
-Characteristics of phase change memory devices based on Ge-doped SbTe and its derivativeCHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook
-Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access MemoryJeung-hyun Jeong; Lee Suyoun; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory MaterialWu Zhe; Lee Suyoun; Jeung-hyun Jeong; Kim Inho; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-Phase Change Material for Potential Use in High density Non-volatile MemoryCHEONG, BYUNG KI; Kim Inho; Jeung-hyun Jeong; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Dae-Hwan Kang; Hee-Suk Chung; Kim Seul-Cham; Kyu Hwan Oh
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