| 1992-09-07 | CHARACTERISTICS OF PLASMA DEPOSITED TUNGSTEN SCHOTTKY CONTACTS TO GAAS | KIM, YT; LEE, CW; HAN, CW; HONG, JS; MIN, SK |
| 1993-06-21 | CHARACTERISTICS OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TUNGSTEN NITRIDE THIN-FILMS | LEE, CW; KIM, YT; MIN, SK |
| 1995-08-07 | COMPARISON OF HIGH-TEMPERATURE THERMAL STABILITIES OF RU AND RUO2 SCHOTTKY CONTACTS TO GAAS | KIM, YT; LEE, CW; KWAK, SK |
| 1994-07-01 | INTERFACE AND ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED TUNGSTEN AND TUNGSTEN NITRIDE SCHOTTKY CONTACTS TO GAAS | KIM, YT; LEE, CW |
| 1992-08-03 | NEW METHOD TO IMPROVE THE ADHESION STRENGTH OF TUNGSTEN THIN-FILM ON SILICON BY W2N GLUE LAYER | KIM, YT; LEE, CW; MIN, SK |
| 1994-01 | NEW METHOD TO IMPROVE THERMAL-STABILITY IN THE INTERFACE OF SILICON AND TUNGSTEN BY THE INTERPOSITION OF PLASMA-DEPOSITED TUNGSTEN NITRIDE THIN-FILM | LEE, CW; KIM, YT; LEE, JY |
| 1994 | TEM STUDIES OF PLASMA-DEPOSITED TUNGSTEN AND TUNGSTEN NITRIDE BARRIERS FOR THERMALLY STABLE METALLIZATION | LEE, CW; KIM, YT; MIN, SK; LEE, C; LEE, JY; PARK, TW |
