CHARACTERISTICS OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TUNGSTEN NITRIDE THIN-FILMS

Abstract

Low resistive tungsten nitride (W100-xNx) thin films have been deposited at 350-400-degrees-C by plasma enhanced chemical vapor deposition. X-ray photoemission spectroscopy, Rutherford backscattering spectrometry, and x-ray diffraction show that the nitrogen composition in W100-xNx films can be easily controlled between 15 and 72 at. % corresponding to an increase of the NH3/WF6 partial pressure ratio and fcc structure W2N can be obtained. The resistivities of W100-xNx films are varied from 70 to 440 muOMEGA cm according to nitrogen composition.