2010-09-06 | Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 degrees C | Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol |
2008-02-15 | Characteristics of transparent ZnO based thin film transistors with amorphous HfO2 gate insulators and Ga doped ZnO electrodes | Kim, Jong Hoon; Du Ahn, Byung; Lee, Choong Hee; Jeon, Kyung Ah; Kang, Hong Seong; Lee, Sang Yeol |
2012-04 | Characterizations of Ga-Doped ZnO Nanowires Depending on Growth Temperature and Target-Substrate Distance in Hot-Walled Pulsed Laser Deposition | Kim, Kyoungwon; Park, Dong-Hoon; Debnath, Pulak Chandra; Lee, Dong-Yun; Kim, Sangsig; Jang, Gun-Eik; Lee, Sang Yeol |
2010-02-22 | Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire | Kim, Kyoungwon; Debnath, Pulak Chandra; Park, Dong-Hoon; Kim, Sangsig; Lee, Sang Yeol |
2008-10-15 | Controlled synthesis of zigzagged and straight Ga-doped ZnO nanowires in hot-walled pulsed laser deposition | Song, Yong-Won; Lee, Sanggyu; Lee, Sang Yeol |
2012-03 | Correlation between the stability and trap parameters of amorphous oxide thin film transistors | Chong, Eugene; Park, Ki-Ho; Cho, Eun Ah; Choi, Jun Young; Kim, Bosul; You, Dong-Youn; Jang, Gun-Eik; Lee, Sang Yeol |
2011-01 | Design of Noncoplanar Diagonal Electrode Structure for Oxide Thin-Film Transistor | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
2012-05-30 | Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition | Kim, Kyoungwon; Lee, Deuk-Hee; Lee, Sang Yeol; Jang, Gun-Eik; Kim, Jin-Sang |
2011-03-21 | Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor | Lee, Sang Yeol; Kim, Do Hyung; Chong, Eugene; Jeon, Yong Woo; Kim, Dae Hwan |
2012-03 | Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method | Kim, Kyoungwon; Kim, Sangsig; Lee, Sang Yeol |
2011-12 | Effect of Indium Contents on the Solution-Processed SiInZnO Thin Film Transistors Annealed at Low Temperature | Park, Ki-Ho; Chong, Eugene; Ju, Byeong-Kwon; Lee, Sang Yeol |
2012-03-01 | Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors | Yoo, Dong Youn; Chong, Eugene; Kim, Do Hyung; Ju, Byeong Kwon; Lee, Sang Yeol |
2011-07 | Effect of oxygen on the threshold voltage of a-IGZO TFT | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
2011-02 | Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress | Chong, Eugene; Chun, Yoon Soo; Lee, Sang Yeol |
2011-07 | Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature | Chun, Yoon Soo; Chang, Seongpil; Lee, Sang Yeol |
2011-10-10 | Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires | Kim, Kyoungwon; Debnath, Pulak Chandra; Lee, Deuk-Hee; Kim, Sangsig; Lee, Sang Yeol |
2008-05-12 | Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure | Chang, Seongpil; Song, Yong-Won; Lee, Sanggyu; Lee, Sang Yeol; Ju, Byeong-Kwon |
2007-02-26 | Enhancement in electrical and optical properties of indium tin oxide thin films grown using a pulsed laser deposition at room temperature by two-step process | Kim, Jong Hoon; Du Ahn, Byung; Lee, Choong Hee; Jeon, Kyung Ah; Kang, Hong Seong; Kim, Gun Hee; Lee, Sang Yeol |
2009-12-15 | Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO | Kim, Kyoungwon; Song, Yong-Won; Chang, Seongpil; Kim, In-Ho; Kim, Sangsig; Lee, Sang Yeol |
2013-05-01 | First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability | Chong, Eugene; Kang, Iljoon; Park, Chul Hong; Lee, Sang Yeol |
2012-08-27 | Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors | Debnath, Pulak Chandra; Lee, Sang Yeol |
2011-06-01 | Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz | Lee, Deuk-Hee; Park, Dong-Hoon; Kim, Sangsig; Lee, Sang Yeol |
2008-02-15 | Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters | Kim, Jong Hoon; Du Ahn, Byung; Kim, Choong Hee; Jeon, Kyung All; Kang, Hong Seong; Lee, Sang Yeol |
2010-04-12 | High stability of amorphous hafnium-indium-zinc-oxide thin film transistor | Chong, Eugene; Jo, Kyoung Chul; Lee, Sang Yeol |
2010-03 | High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature | Lee, Jae Sang; Chang, Seongpil; Koo, Sang-Mo; Lee, Sang Yeol |
2011-08-01 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
2012-01 | Influence of a highly doped buried layer for HfInZnO thin-film transistors | Chong, Eugene; Lee, Sang Yeol |
2007-12-01 | Influence of thermal annealing ambient on Ga-doped ZnO thin films | Du Ahn, Byung; Oh, Sang Hoon; Lee, Choong Hee; Kim, Gun Hee; Kim, Hyun Jae; Lee, Sang Yeol |
2009-02 | Investigation on doping behavior of copper in ZnO thin film | Kim, Gun Hee; Kim, Dong Lim; Ahn, Byung Du; Lee, Sang Yeol; Kim, Hyun Jae |
2011-04-29 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |