| 2003-02-24 | Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography | Offermans, P; Koenraad, PM; Wolter, JH; Song, JD; Kim, JM; Bae, SJ; Lee, YT |
| 2003-07 | CW 0.5-W 1.52-mu m digital alloy AlGaInAs-InP multiple-quantum-well lasers | Heo, DC; Song, JD; Han, IK; Lee, JI; Jeong, JC; Kim, JM; Lee, YT |
| 2004-01-03 | Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots | Lee, CY; Song, JD; Kim, JM; Chang, KS; Lee, YT; Kim, TW |
| 2003-02 | Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-05 | Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots | Lee, CY; Song, JD; Lee, YT; Kim, TW |
| 2004-04-15 | Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source | Kim, JM; Lee, YT; Song, JD; Kim, JH |
| 2005-02 | Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-02 | Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-04 | Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In-0.53(Ga0.6Al0.4)(0.47)As quantum well laser structure with InGaAlAs digital alloys by thermal annealing | Yu, JS; Song, JD; Kim, JM; Bae, SJ; Lee, YT; Lim, H |
| 2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2004-01 | Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers | Yu, JS; Song, JD; Kim, JM; Lee, YT; Lim, H |
| 2004-01 | Initiation and evolution of phase separation in GaP/InP short-period superlattices | Shin, B; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 2005-11-01 | Optical properties of digital-alloy In-0.49(Ga1-zAlz0.51P/GaAs and InGaP/In-0.49(Ga1-zAlz)(0.51)P multi-quantum wells grown by molecular-beam epitaxy | Kim, JM; Park, CY; Lee, YT; Song, JD |
| 2004-02-09 | Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | Song, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH |
| 2006-02 | Polarized optical properties of a GaInP lateral superlattice | Min, KI; Lim, JR; Kim, JS; Rho, H; Hahn, JR; Song, JD; Choi, WJ; Kim, JM; Lee, YT |
