2006-05-23 | A miniaturized electrochemical system with a novel polyelectrolyte reference electrode and its application to thin layer electroanalysis | Kim, SK; Lim, H; Chung, TD; Kim, HC |
2003-02-15 | Coupling characteristics of localized photons in two-dimensional photonic crystals | Kee, CS; Lim, H; Lee, J |
2004-04 | Dose-dependent pharmacokinetics of KR-31378, a new neuroprotective agent for ischaemia-reperfusion damage in dogs | Kim, SO; Kwak, SH; Lee, BH; Lee, DH; Lim, H; Yoo, SE; Chung, HJ; Lee, MG |
2003-02 | Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering | Yu, JS; Song, JD; Lee, YT; Lim, H |
2005-02 | Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries | Yu, JS; Song, JD; Lee, YT; Lim, H |
2003-02 | Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures | Yu, JS; Song, JD; Lee, YT; Lim, H |
2003-04 | Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In-0.53(Ga0.6Al0.4)(0.47)As quantum well laser structure with InGaAlAs digital alloys by thermal annealing | Yu, JS; Song, JD; Kim, JM; Bae, SJ; Lee, YT; Lim, H |
2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
2004-01 | Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers | Yu, JS; Song, JD; Kim, JM; Lee, YT; Lim, H |
1999-07-20 | Investigation of polystyrene, polyisoprene, and poly(2-vinylpyridine) using matrix-assisted laser desorption/ionization time-of-flight mass spectrometry | Lim, H; Lee, Y; Han, SH; Yoo, Y; Kim, KJ |
1997-11-15 | Negative resistance of AlGaAs diodes Co-doped with Si and Mn | Gho, SJ; Park, SH; Lim, H; Choe, BD; Lee, CW; Ko, MK; Kim, YT |
2002-03-04 | Photonic band gap formation by microstrip ring: A way to reduce the size of microwave photonic band gap structures | Kee, CS; Jang, MY; Park, I; Lim, H; Kim, JE; Park, HY; Lee, JI |
2001-04 | Plasma source ion implantation for ultrashallow junctions: Low energy and high dose rate | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H; Jung, HS |
2000-09 | Preparation and characterization of nanoparticulate CoFe2O4 thin films by the sol-gel method | Lim, H; Oh, YJ; Choi, SY |
2002-10-22 | Reduction in surface resistivity of polymers by plasma source ion implantation | Lim, H; Lee, Y; Han, S; Kim, Y; Cho, J; Kim, K |
2005-03-22 | Spectro-ellipsometric studies of Au/SiO2 nanocomposite films | Cho, S; Lim, H; Lee, KS; Lee, TS; Cheong, B; Kim, WM; Lee, S |
1997-05-15 | Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy | Han, IK; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Kim, Y; Lim, H; Park, HL |
2003-01-15 | Structural characterization of various ionomers by time-of-flight secondary ion mass spectrometry | Lee, Y; Han, S; Kwon, MH; Lim, H; Kim, YS; Chun, H; Kim, JS |
2002-08 | Surface analysis of polymers electrically improved by plasma-source ion-implantation | Lee, Y; Han, S; Lim, H; Kim, Y; Kim, H |
2001-08 | Surface characterization of polymers modified by keV and MeV ion beams | Lee, Y; Han, S; Lim, H; Jung, H; Cho, J; Kim, Y |
2001-07 | Surface treatment and characterization of PMMA, PHEMA, and PHPMA | Lim, H; Lee, Y; Han, S; Cho, J; Kim, KJ |
2002-08-01 | The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H |
2001-02-02 | The measurement of nitrogen ion species ratio in inductively coupled plasma source ion implantation | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H; Suh, M |
1996-10-01 | Thermal stability of sulfur-treated InP investigated by photoluminescence | Han, IK; Woo, DH; Kim, HJ; Kim, EK; Lee, JI; Kim, SH; Kang, KN; Lim, H; Park, HL |
2003-08-01 | Wettability of poly (styrene-co-acrylate) ionomers improved by oxygen-plasma source ion implantation | Lim, H; Lee, Y; Han, S; Kim, Y; Song, JM; Kim, JS |