| 1999-03-15 | Characteristics of the intracavity dispersion in an erbium-doped fiber laser | Kim, BK; Lee, JC; Jhon, YM; Kim, MW; Kim, SK; Choi, SS; Oh, MS |
| 1998-12 | Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Defect vs. nanocrystal luminescence emitted in Si-implanted SiO2 layers | Jeong, JY; Im, S; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1998-12 | Effects of BF2 and B implantation-doping on crystalline degradation of pseudomorphic metastable Ge0.06Si0.94 | Im, S; Oh, MS; Joo, MH; Kim, HB; Kim, HK; Song, JH |
| 1999-01 | Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers | Oh, MS; Joo, MH; Im, S; Kim, HB; Kim, HK; Song, JH |
| 2003-10 | Effects of H-2 annealing treatment on photoluminescence and structure of ZnO : Al/Al2O3 grown by radio-frequency magnetron sputtering | Cho, J; Yoon, KH; Oh, MS; Choi, WK |
| 2001-10-01 | Enhancement of photoluminescence and electrical properties of Ga-doped ZnO thin film grown on alpha-Al2O3(0001) single-crystal substrate by rf magnetron sputtering through rapid thermal annealing | Cho, J; Nah, J; Oh, MS; Song, JH; Yoon, KH; Jung, HJ; Choi, WK |
| 1999-02-15 | Enhancing defect-related photoluminescence by hot implantation into SiO2 layers | Im, S; Jeong, JY; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 2004-01-15 | Fabrication and properties of As-doped ZnO films grown on GaAs(001) substrates by radio frequency (rf) magnetron sputtering | Lee, W; Hwang, DK; Jeong, MC; Lee, M; Oh, MS; Choi, WK; Myoung, JM |
| 2000-04 | Gas-source molecular-beam epitaxial growth and optical characterization of AlxGa1-xP (0 <= x <= 78) alloy films | Choi, SG; Woo, DH; Kim, SH; Oh, MS; Kim, YD |
| 2002-10-24 | Investigations on Ta2O5/ZnO insulator-semiconductor interfaces | Nandi, SK; Choi, WK; Noh, YS; Oh, MS; Maikap, S; Hwang, NM; Kim, DY; Chatterjee, S; Samanta, SK; Maiti, CK |
| 1999-04 | Optical studies on a series of AlAs/GaAs short period superlattices | Oh, MS; Choi, SG; Kim, YD; Woo, DH; Koh, EH; Kim, SH; Kang, KN; Rhee, SJ; Woo, JC |
| 1999-07 | Photoluminescence emitted from Si vs. Ge nanocrystals embedded in a SiO2 matrix | Jeong, JY; Im, SI; Oh, MS; Kim, HB; Chae, KH; Whang, CN; Song, JH |
| 1999-07 | Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures | Kim, HB; Kim, TG; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JB |
| 2000-05 | Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy | Woo, DH; Oh, MS; Koh, EH; Yahng, JS; Kim, SH; Kim, YD |
| 1998-12 | The origin of photoluminescence in Ge-implanted SiO2 layers | Kim, HB; Chae, KH; Whang, CN; Jeong, JY; Oh, MS; Im, S; Song, JH |
