| 1993-03 | CONSTANT CAPACITANCE TECHNIQUE TO STUDY ELECTRICAL INSTABILITIES IN INP MIS PROVIDED BY PECVD SILICON-NITRIDE | KIM, CH; KWON, SD; CHOE, BD; HAN, IK; LEE, JI; KANG, KN; PARK, HL; LIM, H |
| 1995-10-15 | DIELECTRIC CAP DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER | CHOI, WJ; LEE, S; KIM, Y; KIM, SK; LEE, JI; KANG, KN; PARK, N; PARK, HL; CHO, K |
| 1994-04-15 | EFFECT OF ULTRAVIOLET ILLUMINATION ON THE CHARGE TRAPPING BEHAVIOR IN SINX/INP METAL-INSULATOR-SEMICONDUCTOR STRUCTURE PROVIDED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION | KIM, CH; HAN, IK; LEE, JI; KANG, KN; KWON, SD; CHOE, B; PARK, HL; HER, J; LIM, H |
| 1994-03-01 | ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION | CHOI, WJ; LEE, JI; HAN, IK; KANG, KN; KIM, Y; PARK, HL; CHO, K |
| 1992-01-15 | GROWTH OF CDTE EPITAXIAL-FILMS ON PARA-INSB(111) BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION | KIM, TW; KOO, BJ; JUNG, M; KIM, SB; PARK, HL; LIM, H; LEE, JI; KANG, KN |
| 1995-05 | HR-COATED FACET EFFECT ON THE SPECTRAL CHARACTERISTICS OF A 3-SECTION DBR TUNABLE LASER | LEE, S; CHOI, WJ; HAN, IK; WOO, DH; KIM, SH; LEE, JI; KANG, KN; PARK, HL |
| 1991-06-01 | INTERFACE PROPERTIES AND CAPACITANCE-VOLTAGE BEHAVIOR OF INDIUM-PHOSPHIDE METAL-INSULATOR-SEMICONDUCTOR PREPARED BY PLASMA-ASSISTED OXIDATION | LIM, H; BAGLIO, JA; DECOLA, N; PARK, HL; LEE, JI; KANG, KN |
| 1991-04 | INTERSTITIAL ZN SIGNATURE IN ZN-DIFFUSED INP | CHOI, JS; LIM, HJ; LEE, JI; CHANG, SK; PARK, HL |
| 1994-12 | LOW DARK CURRENT AND HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON SULFUR-TREATED INP | HAN, IK; HER, J; BYUN, YT; LEE, S; WOO, DH; LEE, Jung Il; KIM, SH; KANG, KN; PARK, HL |
| 1993-08 | MODULATION CHARACTERISTICS OF A TUNABLE MULTISECTION DBR LASER | LEE, S; LEE, SY; PARK, HL; CHOI, WJ; LEE, JI; KANG, KN |
| 1991-09-01 | REMOTE PLASMA-ASSISTED OXIDATION OF INP | LEE, JI; KANG, KN; BAGLIO, JA; LIM, HJ; PARK, HL |
| 1993-07-01 | THE INTERFACIAL LAYER FORMATION OF THE AL2O3/SI STRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, TW; KANG, WN; YOON, YS; YOM, SS; LEE, JY; KIM, CY; LIM, H; PARK, HL |
