2001-01-15 | Cation diffusion characteristics in MgO-doped LiNbO3 during Ti diffusion | Kim, RH; Park, HH; Joo, GT |
1999-11 | Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents | Ha, SM; Kim, DH; Park, HH; Kim, TS |
2005-04 | Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing La as a dopant | Bae, S; Hwang, JS; Kim, WS; Park, HH; Kim, TS |
1998-11-02 | Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O-3/Pt system | Park, HH; Jin, IS; Kim, DH; Kim, TS |
2003-06-01 | Effect of nonionic n-octyl beta-D-glucopyranoside surfactant on the stability improvement of silver polymer electrolyte membranes for olefin/parafil'in separation | Park, HH; Won, J; Oh, SG; Kang, YS |
2005-04 | Electrical properties of screen printed PZT thick films infiltrated with photo-sensitive sol compared with normal sol for cantilever type biochip | Park, JH; Son, JH; Yoon, DS; Kim, TS; Park, HH; Kim, H |
2006-01-23 | Fabrication and electromechanical properties of a self-actuating Pb(Zr0.52Ti0.48)O-3 microcantilever using a direct patternable sol-gel method | Kang, GY; Bae, SW; Park, HH; Kim, TS |
2003-05-06 | Fixation of nanosized proton transport channels in membranes | Won, J; Park, HH; Kim, YJ; Choi, SW; Ha, HY; Oh, IH; Kim, HS; Kang, YS; Ihn, KJ |
2002-03 | Formation and characterization of self-patterned PZT film for applying to micro-mechanical detecting system | Ha, SM; Kim, WS; Park, HH; Kim, TS |
2005 | Label-free protein assay with site-directly immobilized antibody using self-actuating PZT cantilever | Kang, GY; Han, GY; Kang, JY; Cho, IH; Park, HH; Paek, SH; Kim, TS |
2003-10 | Preparation of 0.5 mu m thick self-patternable PZT films by sol-gel procedure for applying to the micro-detection system | Hwang, JS; Kim, WS; Park, HH; Kim, TS |
2005-03-01 | Self-assembled DNA composite membranes | Won, J; Chae, SK; Kim, JH; Park, HH; Kang, YS; Kim, HS |
2001-11 | Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal | Ha, SM; Kim, WS; Park, HH; Kim, TS |
1998-03 | The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices | Jin, IS; Park, HH; Kim, TS |
2005-01-03 | The effect of intermediate anneal on the ferroelectric properties of direct-patternable PZT films | Hwang, JS; Kim, WS; Park, HH; Kim, TS |
2001-11 | The effect of ortho-nitrobenzaldehyde as photosensitizer on the properties of PZT films | Ha, SM; Kim, WS; Park, HH; Kim, TS |
2001-11 | The effects of film thickness of ortho-nitrobenzaldehyde modified PZT on the crystallization and ferroelectric properties | Ha, SM; Kim, WS; Park, HH; Kim, TS |
2001-11 | The effects of solvent on the properties of sol-gel derived PZT thin films | Jung, JY; Kim, WS; Park, HH; Kim, TS |
2001-01-15 | The growth of LiNbO3 (006) on MgO (001) and LiTaO3 (012) substrates by sol-gel procedure | Kim, RH; Park, HH; Joo, GT |