| 2004-07 | A micro-photoluminescence study of vertically stacked InGaAs-GaAs double-layer quantum dots | Choi, YC; Kim, TG; Park, YM; Park, YJ |
| 1996-09 | Abnormal growth of faceted (WC) grains in a (Co) liquid matrix | Park, YJ; Hwang, NM; Yoon, DY |
| 2000-02-14 | Activated sintering of nickel-doped tungsten: Approach by grain boundary structural transition | Hwang, NM; Park, YJ; Kim, DY; Yoon, DY |
| 2002-11-01 | Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice | Kim, KM; Park, YJ; Park, YM; Hyon, CK; Kim, EK; Park, JH |
| 2004-03-15 | Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film | Park, YJ; Oh, CS; Yeom, TH; Yu, YM |
| 2003-02 | Analytic model for photo-response of p-channel MODFET'S | Kim, HJ; Han, I; Choi, WJ; Park, YJ; Cho, WJ; Lee, JI; Kim, DM; Zimmermann, J |
| 2004-09 | Anammox bacteria enrichment in upflow anaerobic sludge blanket (UASB) reactor | Thuan, TH; Jahng, DJ; Jung, JY; Kim, DJ; Kim, WK; Park, YJ; Kim, JE; Ahn, DH |
| 2000-10-16 | Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs | Hyon, CK; Choi, SC; Song, SH; Hwang, SW; Son, MH; Ahn, D; Park, YJ; Kim, EK |
| 2004-08 | Artificial array of InAs quantum dots on a strain-engineered superlattice | Kim, KM; Park, YJ; Son, SH; Lee, SH; Lee, JI; Park, JH; Park, SK |
| 1999-03-12 | beta-SiC thin film growth using microwave plasma activated CH4-SiH4 sources | Kim, HS; Park, YJ; Choi, IH; Baik, YJ |
| 2004-07 | Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-09 | Carrier dynamics in the coupled structure of InGaAs quantum dots in a well | Park, YM; Yoo, KH; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2006-05-18 | Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer | Shon, Y; Jeon, HC; Park, YS; Lee, S; Kwon, YH; Lee, SJ; Kim, DY; Kim, HS; Kang, TW; Park, YJ; Yoon, CS; Kim, CK; Kim, EK; Kim, Y; Woo, YD |
| 2000-09-29 | Characteristics of GaN films grown on the stress-imposed Si(111) | Koh, EK; Park, YJ; Kim, EK; Park, CS; Lee, SH; Lee, JH; Choh, SH |
| 1998-11 | Characteristics of GaN micro-crystals synthesized by the direct reaction of NH3 with Ga-melt | Park, YJ; Son, MH; Kim, EK; Min, SK |
| 2002-10 | Characteristics of molecular beam epitaxy-grown GaFeAs | Park, YJ; Oh, HT; Park, CJ; Cho, HY; Shon, Y; Kim, EK; Moriya, R; Munekata, H |
| 1997-06 | Characterization of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance | Park, YJ; Kim, EK; Min, SK; Park, IW; Yeom, TH; Munekata, H; Kukimoto, H |
| 1997-01 | Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property | Park, YJ; Yeom, TH; Park, IW; Choh, SH; Min, SK |
| 2004-12 | Coupling effect between InAs quantum dot and electric field-induced quantum dot | Kim, JH; Jung, JH; Kwack, KD; Kim, TW; Park, YJ |
| 2005-05-01 | Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2/Si substrates by sputtering method | Park, YJ; Lee, JY; Youm, MS; Kim, YT; Lee, HS |
| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 2000 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Min, BD; Park, YJ; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
| 2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
| 2002-01-15 | Design and properties of mixed-metal multinuclear molecules. Part II. Novel heterotrinuclear complexes of [Ag(PPh3)(2)](2)[Cu(mtm)(2)] and [Ag-2(dppm)(2)][Cu(mtm)(2)] (mtm = [bis(methylthio)methylene]malonate and dppm = bis(diphenylphosphino)methane) | Park, YJ; Do, Y; Kim, KM; Choi, MG; Jun, MJ; Kim, C |
| 2005-08-01 | Diluted magnetic semiconductor of p-type InMnP : Zn epilayer | Shon, Y; Jeon, HC; Park, YS; Lee, SJ; Kim, DY; Kim, HS; Kang, TW; Park, YJ; Yoon, CS; Kim, CK; Kim, EK; Kim, Y; Woo, YD |
| 2005-10 | Direct patterning of self assembled nano-structures of block copolymers via electron beam lithography | Yoon, BK; Hwang, W; Park, YJ; Hwang, J; Park, C; Chang, J |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2000-12 | Effects of a Si molecular beam on the formation of InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Roh, CH; Hyon, CK; Kim, EK; Yoo, KH |
| 2001-12 | Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots | Park, SK; Park, YJ; Park, YM; Kim, HJ; Kim, EK; Lee, C |
