Analytic model for photo-response of p-channel MODFET'S

Abstract

In this article we propose a comprehensive physical model for the photo-response of MODFET's and analyze the experimental results for p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET's. The analytic model is based on the quantum nature of the two-dimensional carrier statistics in the channel and the recently developed device equation for tit(gate current. The model predicts a power law relationship between the current ratio with and without optical illumination, and the optical intensity, and successfully explains the experimental results. The gate voltage dependence of the effective ideality factor for the whole gate structure was extracted and discussed.