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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
-Comparison of ferroelectric hysteresis between Pt and RuO2 top electrodes for SrBi2Ta2O9/Pt and SrBi2Ta2O9/Si structuresSung-Kyun Lee; Ho Nyung Lee; Kim Yong Tae; 이철의
-Correlation between charge injection and memory window in the ferroelectric gate stack structuresSung-Kyun Lee; 최인훈; 이철의; Kim Yong Tae; KIM CHUN KEUN
-Effect of thickness of ferroelectrics and insulators on the memory window of ferroelectric gate capacitorsSung-Kyun Lee; Kim Yong Tae; KIM CHUN KEUN; Kim Seong Il; 이철의
-Effects of charge trapping on the asymmetrical shift of memory window in MFIS devices이용원; 강동; 노용한; Sung-Kyun Lee; Kim Yong Tae
-Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structureSung-Kyun Lee; Kim Yong Tae; Kim Seong Il; 이철의
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