| 2003-06 | Charge-discharge induced phase transformation of RuO2 electrode for thin film supercapacitor | Kim, HK; Seong, TY; Lee, SM; Yoon, YS |
| 2008-09 | Cu-doped ZnO-based p-n hetero-junction light emitting diode | Kim, J. B.; Byun, D.; Ie, S. Y.; Park, D. H.; Choi, W. K.; Choi, Ji-Won; Angadi, Basavaraj |
| 2008-11 | Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures | Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G. |
| 2015-04 | Graphene-GaN Schottky diodes | Kim, Seongjun; Seo, Tae Hoon; Kim, Myung Jong; Song, Keun Man; Suh, Eun-Kyung; Kim, Hyunsoo |
| 2017-11-15 | High work function MoO2 and ReO2 contacts for p-type Si and GaN by a room-temperature non-vacuum process | Lee, Won-Jae; Parmar, Narendra S.; Choi, Ji-Won |
| 2001-04 | Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures | Kim, TW; Lee, DU; Jung, M; Lee, JH; Kim, HJ; Choo, DC; Kim, JY; Yoon, YS |
| 2009-07 | Preparation and Analysis of Schottky Diodes with Au and Sol-gel-processed ZnO Thin Films | Kim, Kyoungwon; Song, Yong-Won; Leem, Jaehyeon; Lee, Sang Yeol; Kim, Sangsig |
