| 2001-06 | Defect generation in multi-stacked InAs quantum dot/GaAs structures | Roh, CH; Park, YJ; Kim, KM; Park, YM; Kim, EK; Shim, KB |
| 2001-03 | Selective positioning of InAs quantum dots on a GaAs substrate directly patterned by using an atomic force microscope | Hyon, CK; Choi, SC; Hwang, SW; Min, BD; Ahn, D; Park, YJ; Kim, EK |
| 2001-05-21 | Fabrication of wirelike InAs quantum dots on 2 degrees-off GaAs (100) substrates by changing the thickness of the InAs layer | Kim, HJ; Park, YJ; Park, YM; Kim, EK; Kim, TW |
| 2001-05-25 | Electromigration-induced stress interaction between vias and polygranular clusters | Park, YJ; Joo, YC |
| 2001-03 | Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer | Kim, HJ; Park, YJ; Kim, EK; Kim, TW |
| 2001-09-01 | Ellipsometric study of InAs wetting layer in InAs/GaAs quantum dots at the threshold of quantum dot formation | Lee, H; Kim, SM; Park, YJ; Kim, EK |
| 2001-08-13 | Tertiary grain growth driven by surface energy | Jung, JK; Park, YJ; Hwang, NM; Joo, YC |
| 2001-07 | Influence of growth conditions on the formation and the optical properties of self-assembled InAs quantum dots on (001)GaAs | Nah, J; Park, SH; Kim, KM; Park, YJ; Hyon, CK; Kim, EK |
| 2001-06 | Visible photoluminescence from porous poly-Si/Si and amorphous-Si/Si structures | Kim, MG; Yun, Z; Lyou, J; Cho, S; Park, YJ; Kim, EK |
| 2001-04 | Dependence of buffer layer on the distribution of InAs quantum dots | Kim, HJ; Park, YJ; Min, BD; Hyon, CK; Park, SK; Kim, EK; Kim, TW |
