2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
2004-08 | Study on InGaAsP-InGaAs MQW-LD with symmetric and asymmetric separate confinement heterostructure | Heo, D; Han, IK; Lee, JI; Jeong, J |
2004-08 | Structural, optical, and electrical characterizations of a quantum cascade laser structure | Park, HK; Kim, JS; Kim, EK; Lee, CH; Song, JD; Han, IK |
2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | Lee, CM; Choi, SH; Kim, CS; Noh, SK; Lee, JI; Lim, KY; Han, IK |
2004-11 | Study on superluminescent diodes using InGaAs-InAs chirped quantum dots | Han, IK; Heo, DC; Song, JD; Lee, JI |
2004-12 | High power laser diodes/superluminescent diodes | Han, IK |
2004-10 | White light emitting silicon nanocrystals as nanophosphor | Lee, S; Cho, WJ; Han, IK; Choi, WJ; Lee, JI |
2004-12 | Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors | Han, IK; Lee, JI; Lee, MB; Chang, SK; Kim, EK |
2004-08 | Effects of the V/III flux ratio on the Curie temperature of GaMnAs | Koh, D; Chung, KS; Park, JB; Kim, KM; Park, YJ; Han, IK; Lee, JI |