Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells

Authors
Lee, CMChoi, SHKim, CSNoh, SKLee, JILim, KYHan, IK
Issue Date
2004-08
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.2, pp.L243 - L247
Abstract
The photoluminescence (PL) spectra of InGaN/GaN multiple quantum wells (MQWs) grown by using metalorganic chemical vapor deposition were investigated by varying the PL temperature and the excitation power density. The PL spectrum of InGaN/GaN MQWs exhibits a multi-like feature related to the InGaN well at low temperature, indicating a nonuniformity of the indium composition due to the miscibility between InN and GaN, which results in an exciton localization effect. With increasing excitation power density, the emission peak of the MQW exhibits a blueshift and its linewidth decreases. Based on the theory of the quantum confined Stark effect, the behavior of the MQW can be well explained. The high-energy emission is quenched quickly by increasing temperature, and the low-energy emission becomes dominant because of the different activation energy, which proves that the high-energy emission is a MQW-related emission and that the lowenergy emission is from strongly localized excitons.
Keywords
RECOMBINATION DYNAMICS; LOCALIZED EXCITONS; EMISSION; TEMPERATURE; SINGLE; RECOMBINATION DYNAMICS; LOCALIZED EXCITONS; EMISSION; TEMPERATURE; SINGLE; InGaN/GaN-MQWs; photoluminescence; quantum confined Stark effect
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/137378
Appears in Collections:
KIST Article > 2004
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE