2004-11-01 | Hydrogen-induced atomic deformation in SrBi2Nb2O9 perovskite structure | Kim, IS; Choi, IH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
2004-10 | A new atomic layer deposition of W-N thin films | Sim, HS; 박지호; Kim, YT |
2004-08 | Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | Il Shim, S; Kwon, YS; Kim, IS; Kim, SI; Kim, YT; Park, JH |
2004-12 | Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
2004-10-28 | Operation of single transistor type ferroelectric random access memory | Shim, SI; Kim, S; Kim, YT; Park, JH |
2004-11 | Sol-gel derived Nd-substituted Bi4Ti3O12 thin film and its electrical properties | Kim, IS; Kim, YM; Choi, IH; Hong, SK; Kim, WS; Il Shim, S; Kim, YT; Kim, YH |
2004-09 | Strong blue emission from Er3+ doped in AlxGa1-xN | Wakahara, A; Nakanishi, Y; Fujiwara, T; Okada, H; Yoshida, A; Ohshima, T; Kamiya, T; Kim, YT |
2004-06 | Effect of Al composition on luminescence properties of rare-earth implanted into AlGaN | Yoshida, A; Wakahara, A; Nakanishi, Y; Okada, H; Ohshima, T; Itoh, H; Kim, YT |
2004-05 | Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt-SrBi2Nb2O9-SiO2_Si gate structure | Kim, IS; Kim, SI; Kim, YT |