2004-11 | Linear electro-optic coefficient of a GaAs/Al0.4Ga0.6As phase modulator | Byun, YT; Kim, SJ; Kim, SH |
2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
2004-07-01 | Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices | Son, SH; Cho, KH; Hwang, SW; Kim, KM; Park, YJ; Yu, YS; Ahn, D |
2004-12 | Characteristics of 1/f noise in Au/GaAs Schottky diode embedded with self-assembled InAs quantum dots | Song, JD; Choi, WJ; Han, IK; Lee, JI; Kim, JH; Song, JI; Chovet, A |
2004-11-15 | State filling phenomena in modulation-doped InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
2004-11-15 | Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI; Yoo, KH; Kim, HS; Park, CG |
2004-04 | Enhanced optical properties of high-density (> 10(11)/cm(2)) InAs/AlAs quantum dots by hydrogen passivation | Park, SK; Tatebayashi, J; Nakaoka, T; Sato, T; Park, YJ; Arakawa, Y |
2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |