| 2004-12 | Synthesis and properties of highly phenyl-substituted fluorene copolymers containing hole and electron transporting moieties via Diels-Alder polymerization | Suh, DH; Jung, SH; Park, SJ; Kim, DY; Cho, HN |
| 2004-10 | Optical properties of ZnO nanocrystals synthesized by using sol-gel method | Chang, HJ; Lu, CZ; Wang, YS; Son, CS; Kim, SI; Kim, YH; Choi, IH |
| 2004-10 | Photoluminescence of Er-implanted GaN | Son, CS; Kim, S; Kim, YH; Han, IK; Kim, YT; Wakahara, A; Choi, IH; Lopez, HC |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-09-13 | Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates | Kim, YG; Joh, YS; Song, JH; Sim, ED; Baek, KS; Chang, SK; Lee, JI |
| 2004-08 | Low-energy ion beam treatment of alpha-Al2O3(0001) and improvement of photoluminescence of ZnO thin films | Park, JY; No, YS; Park, BJ; Lee, HW; Choi, JW; Kim, JS; Ermakov, Y; Yoon, SJ; Oh, YJ; Choi, WK |
| 2004-08 | Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells | Lee, CM; Choi, SH; Kim, CS; Noh, SK; Lee, JI; Lim, KY; Han, IK |
| 2004-07 | Carrier dynamics in an InGaAs dots-in-a-well structure formed by atomic-layer epitaxy | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
