Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates

Authors
Kim, YGJoh, YSSong, JHSim, EDBaek, KSChang, SKLee, JI
Issue Date
2004-09-13
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.85, no.11, pp.2056 - 2058
Abstract
Strain effects on sizes and emission energies of ZnSe/ZnS quantum dots (QDs) have been investigated. The initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshifts of the ground-state emission from 4 monolayer ZnSe QDs were observed with increasing the thickness of the ZnS buffer from 20 to 40 nm. Atomic-force microscopy revealed that the blueshifts are due to a continuous QD size reduction. We estimated the emission energy as a function of the initial strain in the ZnSe QD layer, which shows that the band-gap engineering is possible through the strain modification. (C) 2004 American Institute of Physics.
Keywords
ISLANDS; ISLANDS; strain; quantum dots; ZnSe/ZnS; size modulation; photoluminescence
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/137230
DOI
10.1063/1.1790035
Appears in Collections:
KIST Article > 2004
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