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Issue DateTitleAuthor(s)
2006-12Energy harvesting MEMS device based on thin film piezoelectric cantileversChoi, W. J.; Jeon, Y.; Jeong, J. -H.; Sood, R.; Kim, S. G.
2006-11Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structureKim, J. S.; Kim, E. K.; Song, J. D.; Choi, W. J.; Lee, J. I.
2006-05Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sourcesSong, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T.
2006-09Low-frequency noise in high-k gate dielectric nanoscale MOSFETsHan, I. K.; Nam, H. D.; Choi, W. J.; Lee, J. I.; Szentpali, B.; Chovet, A.
2006-05Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structureNam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H.
2006-06Photoluminescence and Raman studies of an ln(x)Ga(1-x)P quantum wire structure fabricated using lateral composition modulationLim, Jung-Ran; Rho, Heesuk; Song, J. D.; Choi, W. J.; Kim, J. M.; Lee, Y. T.
2006-08Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processesLim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S.
2006-10Low frequency noise in GaAs structures with embedded In(Ga)As quantum dotsLee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A.

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