| 2019-03-01 | 1.3-mu m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon | Duan, Jianan; Huang, Heming; Dong, Bozhang; Jung, Daehwan; Norman, Justin C.; Bowers, John E.; Grillot, Frederic |
| 2019-07-15 | III-V on silicon avalanche photodiodes by heteroepitaxy | Yuan, Yuan; Jung, Daehwan; Sun, Keye; Zheng, Jiyuan; Jones, Andrew H.; Bowers, John E.; Campbell, Joe C. |
| 2019-06 | Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers | Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo; Jung, Daehwan; Norman, Justin; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo |
| 2019-04 | A Review of High-Performance Quantum Dot Lasers on Silicon | Norman, Justin C.; Jung, Daehwan; Zhang, Zeyu; Wan, Yating; Liu, Songtao; Shang, Chen; Herrick, Robert W.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E. |
| 2019-10 | High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate | Liu, Songtao; Norman, Justin; Dumont, Mario; Jung, Daehwan; Torres, Alfredo; Gossard, Arthur C.; Bowers, John E. |
| 2019-05 | Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate | Huang, Jian; Wan, Yating; Jung, Daehwan; Norman, Justin; Shang, Chen; Li, Qiang; Lau, Kei May; Gossard, Arthur C.; Bowers, John E.; Chen, Baile |
| 2019-03-11 | Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain | Vega-Flick, Alejandro; Jung, Daehwan; Yue, Shengying; Bowers, John E.; Liao, Bolin |
| 2019-12 | The Importance of p-Doping for Quantum Dot Laser on Silicon Performance | Norman, Justin C.; Zhang, Zeyu; Jung, Daehwan; Shang, Chen; Kennedy, M. J.; Dumont, Mario; Herrick, Robert W.; Gossard, Arthur C.; Bowers, John E. |
| 2019-11 | Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications | Zhang, Zeyu; Jung, Daehwan; Norman, Justin C.; Chow, Weng W.; Bowers, John E. |
