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dc.contributor.author김경호-
dc.contributor.authorKim Hyung-jun-
dc.contributor.authorPark Youn-Ho-
dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorHan, Suk Hee-
dc.date.accessioned2024-01-13T00:33:42Z-
dc.date.available2024-01-13T00:33:42Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/100548-
dc.languageEnglish-
dc.subjectspin-orbit interaction-
dc.subjectquantum well-
dc.subjectspin-FET-
dc.subjectinternal potential asymmetry-
dc.subjectRashba effect-
dc.subjectSdH oscillation-
dc.subjectgate electric field-
dc.titleManipulation of electric field induced spin-orbit interaction parameter in double-sided doped InAs and In0.53Ga0.47As quantum well structures-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationICAMD, pp.394-
dc.citation.titleICAMD-
dc.citation.startPage394-
dc.citation.endPage394-
dc.citation.conferencePlaceKO-
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